NP55N03SUG - MOS FIELD EFFECT TRANSISTOR

Renesas

General Description

The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

Channel temperature 175 degree rated.
Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A).
Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V).

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NP55N03SUG mos field effect transistor by Renesas - Datasheet Preview

Datasheet Details

Part number	NP55N03SUG
Manufacturer	Renesas
File Size	248.98 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP55N03SUG Datasheet

Full PDF Text Transcription for NP55N03SUG (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high ...

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NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP55N03SUG-E1-AY Note NP55N03SUG-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES • Channel temperature 175 degree rated • Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low input capacitance Ciss = 3500 pF TYP.

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