NP80N04DHE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2200 pF TYP
- Built-in gate protection diode (TO-262)
- Part: NP80N04DHE
- Manufacturer: NEC (official site)
- Size: 243.00 KB
Other NP80N04DHE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
NP80N04MDG | N-CHANNEL POWER MOS FET |
|
Renesas |
NP80N04MLG | N-CHANNEL POWER MOS FET |
|
Renesas |
NP80N04NDG | N-CHANNEL POWER MOS FET |
|
Renesas |
NP80N04NLG | N-CHANNEL POWER MOS FET |
|
Renesas |
NP80N04NUG | N-CHANNEL POWER MOS FET |
NP80N04DHE Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N04CHE-S12-AZ NP80N04DHE-S12-AY NP80N04MHE-S18-AY NP80N04NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ.