NP80N04NHE Overview
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N04CHE-S12-AZ NP80N04DHE-S12-AY NP80N04MHE-S18-AY NP80N04NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ.
NP80N04NHE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2200 pF TYP
- Built-in gate protection diode (TO-262)
