NP80N04PDG Datasheet | Renesas

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g Features - Logic level - Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PDG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - High current rating ID(DC) = ±80 A - Low input capacitance Ciss = 4600 p F TYP. - Designed for automotive application and AEC-Q101 qualified (TO-220) (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19795EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan NP80N04MDG, NP80N04NDG,...