Description
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Logic level.
- Super low on-state resistance
- NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PDG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
- High current rating ID(DC) = ±80 A.
- Low input capacitance Ciss = 4600 pF TYP.
- Designed for automotive.
NP80N04MDG Datasheet
