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NP80N04NLG - N-CHANNEL POWER MOS FET

Download the NP80N04NLG datasheet PDF. This datasheet also covers the NP80N04MLG variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Logic level.
  • Built-in gate protection diode.
  • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • High current rating ID(DC) = ±80 A.
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP80N04MLG-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP80N04NLG
Manufacturer Renesas
File Size 281.58 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP80N04NLG Datasheet

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Other Datasheets by Renesas

Part Number Description
NP80N04NDG N-CHANNEL POWER MOS FET
NP80N04NUG N-CHANNEL POWER MOS FET
NP80N04MDG N-CHANNEL POWER MOS FET
NP80N04MLG N-CHANNEL POWER MOS FET
NP80N04PDG N-CHANNEL POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY Note NP80N04NLG-S18-AY Note NP80N04PLG-E1B-AY Note NP80N04PLG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.