Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1764
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DRAWING (Unit : mm)
5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4
+0.10
- 0.05
Features
- Dual chip type
- Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP.) (VGS = 4.0 V, ID = 3.5 A)
- Low input capacitance Ciss = 1300 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8 MAX.
5 5...