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UPA1764 Datasheet SWITCHING DUAL N-CHANNEL POWER MOSFET

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1764 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL.

General Description

The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications.

8 PACKAGE DRAWING (Unit : mm) 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4 +0.10 –0.05

Key Features

  • Dual chip type.
  • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP. ) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP. ) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP. ) (VGS = 4.0 V, ID = 3.5 A).
  • Low input capacitance Ciss = 1300 pF (TYP. ).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 5 5 5 5 1 4 5.37 MAX. 1.44 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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