UPA1760 Datasheet PDF - NEC Switching N-Channel Power MOSFET Specs

UPA1760 - Switching N-Channel Power MOSFET

Datasheet Summary

Description

The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.

0.05

Features

Dual Chip Type 1.44.
Low On-Resistance 5 5 5 1.8 Max. 1 5.37 Max. 4 0.8 RDS(on)1 = 26.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A).
Low Ciss : Ciss = 760 pF TYP.
Built-in G-S Protection Diode.
Small and Surface Mount Package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10.
0.05.

Datasheet Details

Part number	UPA1760
Manufacturer	NEC
File Size	68.66 KB
Description	Switching N-Channel Power MOSFET
Datasheet	UPA1760 Datasheet
Additional preview pages of the UPA1760 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. PACKAGE DRAWING (Unit : mm) 8 5 1 2 7, 8 3 4 5, 6 ; Source1 ; Gate1 ; Drain1 ; Source2 ; Gate2 ; Drain2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES • Dual Chip Type 1.44 • Low On-Resistance 5 5 5 1.8 Max. 1 5.37 Max. 4 0.8 RDS(on)1 = 26.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss : Ciss = 760 pF TYP. • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.

Published: Apr 17, 2005 |