UPA1764
Description
The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. 8 PACKAGE DRAWING (Unit : mm) 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4 +0.10 -0.05.
Key Features
- Dual chip type
- Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP.) (VGS = 4.0 V, ID = 3.5 A)
- Low input capacitance Ciss = 1300 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
- 8 MAX. 5 5 5 5 1 4 5.37 MAX.
- 05 MIN.
- 5 ±0.2 0.10
- 27 0.78 MAX. 0.40 +0.10 -0.05
