UPA1764 Datasheet PDF - NEC SWITCHING DUAL N-CHANNEL POWER MOSFET Specs

UPA1764 - SWITCHING DUAL N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications.

0.05

Features

Dual chip type.
Low On-state Resistance RDS(on)1 = 27 mΩ (TYP. ) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP. ) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP. ) (VGS = 4.0 V, ID = 3.5 A).
Low input capacitance Ciss = 1300 pF (TYP. ).
Built-in G-S protection diode.
Small and surface mount package (Power SOP8) 1.8 MAX. 5 5 5 5 1 4 5.37 MAX. 1.44 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
0.05 0.12 M.

Datasheet Details

Part number	UPA1764
Manufacturer	NEC
File Size	38.80 KB
Description	SWITCHING DUAL N-CHANNEL POWER MOSFET
Datasheet	UPA1764 Datasheet
Additional preview pages of the UPA1764 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1764 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. 8 PACKAGE DRAWING (Unit : mm) 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP.) (VGS = 4.0 V, ID = 3.5 A) • Low input capacitance Ciss = 1300 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 5 5 5 5 1 4 5.37 MAX. 1.44 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.

Published: Apr 17, 2005 |