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UPA1816 - MOS FIELD EFFECT TRANSISTOR

General Description

driven directly by a 1.8 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPA1810 P-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1811 P-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A) RDS(on)3 = 22.5 mΩ MAX. (VGS = −2.5 V, ID = −4.5 A) RDS(on)4 = 41.5 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) • Built-in G-S protection diode against ESD PACKAGE DRAWING (Unit: mm) 85 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0 ±0.05 0.