UPA2503 Key Features
- Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 8.0
- Low Ciss: 1200 pF TYP. (VDS = 10.0 V, VGS = 0 V)
- µ PA2503 has a thin surface mount package with a heat
- Part: UPA2503
- Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR
- Manufacturer: NEC
- Size: 188.39 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| UPA2502 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| UPA2510 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| UPA2001C | NPN Silicon Epitaxial Darlington Transistor Array |
| UPA2002C | NPN Silicon Epitaxial Darlington Transistor Array |
| UPA2003C | NPN Silicon Epitaxial Darlington Transistor Array |