UPA2733GR Description
The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook puters and so on.
UPA2733GR Key Features
- Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = -10 V, ID = -2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = -4.5 V, ID = -2.5
- Low Ciss: Ciss = 870 pF TYP
- Built-in gate protection diode
- Small and surface mount package (Power SOP8)