Part number:
UPA621TT
Manufacturer:
NEC
File Size:
66.39 KB
Description:
N-channel mos field effect transistor.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES
* 2.5 V drive available
* Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 53 mΩ MAX. (VG
UPA621TT
NEC
66.39 KB
N-channel mos field effect transistor.
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