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UPC1679G - 5 V-BIAS/ +5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

Datasheet Summary

Description

The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications.

Due to +13 dBm TYP.

output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems.

Features

  • Supply voltage.
  • Saturated output power.
  • Wideband response.
  • Isolation.
  • Power Gain : VCC = 4.5 to 5.5 V : PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 1.8 GHz TYP. @ 3 dB bandwidth : ISL = 34 dB TYP. @ f = 500 MHz : GP = 21.5 dB TYP. @ f = 500 MHz.

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Datasheet Details

Part number UPC1679G
Manufacturer NEC
File Size 73.63 KB
Description 5 V-BIAS/ +5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER
Datasheet download datasheet UPC1679G Datasheet
Additional preview pages of the UPC1679G datasheet.

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Full PDF Text Transcription

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
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