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UPC2776TB - 5 V/ SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

Description

The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band.

This IC is packaged in super minimold package which is smaller than conventional minimold.

Features

  • High-density surface mounting: 6-pin super minimold package.
  • Wideband response.
  • Medium output power.
  • Supply voltage.
  • Power gain.
  • Port impedance : fu = 2.7 GHzTYP. @ 3 dB bandwidth : Po (1 dB) = +6.5 dBm @ f = 1 GHz with external inductor : VCC = 4.5 to 5.5 V : GP = 23 dBTYP. @ f = 1 GHz : input/output 50 Ω.

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Datasheet preview – UPC2776TB

Datasheet Details

Part number UPC2776TB
Manufacturer NEC
File Size 80.48 KB
Description 5 V/ SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
Datasheet download datasheet UPC2776TB Datasheet
Additional preview pages of the UPC2776TB datasheet.

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Full PDF Text Transcription

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2776TB has compatible pin connections and performance to the µPC2776T of conventional minimold version. So, in the case of reducing your system size, the µPC2776TB is suitable to replace from the µPC2776T. These IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes.
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