Datasheet4U Logo Datasheet4U.com

UPC8109TB - SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

General Description

The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage.

Key Features

  • improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPC812G2 Operational Amplifier ETC
UPC814C TTL Dual Operational Amplifier ETC
UPC817 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER UTC
UPC8172TB SILICON RFIC 2.5 GHz FREQUENCY UP-CONVERTER CEL
uPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPC8109T 3 V/ SILICON MMIC FREQUENCY UP-CONVERTER
UPC8100GR SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS
UPC8101GR 3 V/ SILICON MMIC 150 MHz QUADRATURE MODULATOR
UPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM
UPC8103T MIXER + OSCILLATOR IC FOR PAGER SYSTEM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET µPC8106TB, µPC8109TB SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES BIPOLAR ANALOG INTEGRATED CIRCUITS DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes.