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UPD16814 - MONOLITHIC DUAL H-BRIDGE DRIVER

General Description

The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage.

By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as compared with that of the conventional charge pump driver.

Key Features

  • Low ON resistance (sum of ON resistance of top and bottom FETs) RON1 = 2.0 Ω TYP.
  • Low current consumption: IDD = 100 µA MAX.
  • Four input modes independently controlling dual H bridge drivers.
  • Stop and Brake modes selectable.
  • Surface-mount mini-mold package: 16-pin plastic SOP (300 mil) PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as compared with that of the conventional charge pump driver. Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistance of top and bottom FETs) RON1 = 2.0 Ω TYP. • Low current consumption: IDD = 100 µA MAX.