UPD4164-1 Key Features
- High Memory Density
- MUltiplexed Address Inputs
- Single +5V Supply
- On Chip Substrate Bias Generator
- Access Time: /lPD4164-1
- 250 ns
- 200 ns /lPD4164-3
- 150 ns
- Read, Write Cycle Time: /lPD4164-1
- 410 ns
- Part: UPD4164-1
- Description: 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
- Manufacturer: NEC
- Size: 367.60 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| UPD4164-2 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD4164-3 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD4164 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD416 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-1 | 16K x 1-Bit DYNAMIC NMOS RAM |