UPD4164-1 Datasheet 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY

Manufacturer: NEC (now Renesas Electronics)

UPD4164-1 65536 x 1-bit dynamic random access memory by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	UPD4164-1
Manufacturer	NEC (now Renesas Electronics)
File Size	367.60 KB
Description	65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
Datasheet	UPD4164-1 Datasheet

Overview

NEe Microcomputers, Inc.

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,.

PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR I PTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply.

Key Features

Multiplexed address inputs permit the /lPD4164 to be packaged in the standard 16 pin dual-in-line package. The 16 pin package provides the highest system bit densities and is compatible with widely available automated handling equipment.
High Memory Density.
MUltiplexed Address Inputs.
Single +5V Supply.
On Chip Substrate Bias Generator.
Access Time: /lPD4164-1 - 250 ns /lPD4164-2 - 200 ns /lPD4164-3 - 150 ns.
Read, Write Cycle Time: /lPD41.

More Datasheets from NEC (now Renesas Electronics)

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UPD416-3	16K x 1-Bit DYNAMIC NMOS RAM