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UPD431000A - 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT

This page provides the datasheet information for the UPD431000A, a member of the UPD431000ACZ 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT family.

Description

The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity.

And battery backup is available.

Features

  • 131,072 words by 8 bits organization.
  • Fast access time: 70, 85, 100, 120, 150 ns (MAX. ).
  • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V).
  • Operating ambient temperature: TA = 0 to 70 °C.
  • Low VCC data retention: 2.0 V (MIN. ).
  • Output Enable input for easy.

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Datasheet Details

Part number UPD431000A
Manufacturer NEC
File Size 227.58 KB
Description 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
Datasheet download datasheet UPD431000A Datasheet
Additional preview pages of the UPD431000A datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In addition to this, A and B versions are low voltage operations. The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4 mm) and (8 × 20 mm). Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = 0 to 70 °C • Low VCC data retention: 2.0 V (MIN.
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