1M-BIT Datasheet | Specifications & PDF Download

1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor

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1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor

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ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features I I I I I I I I 6 Low Power Micron 1M X 16 Synchronous Dynamic Ra

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor

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PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM co

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www.DataSheet4U.com KM23C8100D(E)T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(wor

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Product Folder Order Now Technical Documents Tools & Software Support & Community ADS131M08 SBAS950A – OCTOBER 2019 – REVISED DECEMBER 2019 ADS13

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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FEATURES: • High-density 1024K (128K x 8) CMOS static RAM module • Equivalent to JEDEC standard for future monolithic 128K x 8 static RAMs • Fast acce

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www.DataSheet4U.com CY7C1471V33 CY7C1473V33 CY7C1475V33 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture Features • No Bu

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Product Folder Order Now Technical Documents Tools & Software Support & Community ADS131M04 SBAS890A – MARCH 2019 – REVISED JULY 2019 ADS131M04 4

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I

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HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui

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K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi

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K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History

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LG Semicon Co.,Ltd. Description The GM71C4403C is the new generation dynamic RAM organized 1,048,576 words x 4 bit. GM71C4403C has realized higher den

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www.DataSheet4U.com ESMT F25L008A 8Mbit (1Mx8) 3V Only Serial Flash Memory „ FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency :

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MX25L1005 MX25L1005 DATASHEET The MX25L1005 product family is not recommended for new designs. The MX25L1005C family is the recommended replacement.

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