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  NEC Electronic Components Datasheet  

UPG110B Datasheet

2-8 GHZ WIDE-BAND AMPLIFIER

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2-8 GHz WIDE-BAND AMPLIFIER
UPG110B
UPG110P
FEATURES
WIDE-BAND: 2 to 8 GHz
HIGH GAIN: 15 dB at f = 2 to 8 GHz
MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
INPUT/OUTPUT IMPEDANCE MATCHED TO 50
HERMETICALLY SEALED PACKAGE ASSURES HIGH
RELIABILITY
DESCRIPTION
The UPG110B is a GaAs monolithic integrated circuit de-
signed for use as a wide-band amplifier from 2 GHz to 8 GHz.
The device is most suitable for the gain stage of microwave
communication systems where high gain characteristics are
required. The UPG110 is available in a 4 pin flat package and
in chip form.
GAIN vs. FREQUENCY AND TEMPERATURE
20
15
10
5
0
-5
-10
0
24
68
Frequency, f (GHz)
T = -25˚C
T = +25˚C
T = +75˚C
10
ELECTRICAL CHARACTERISTICS1 (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz)
SYMBOLS
IDD
GP
GL
RLIN
RLOUT
ISOL
P1dB
IP3
PART NUMBER
PACKAGE OUTLINE
PARAMETERS
Supply Current
Power Gain
Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power at 1 dB Compression Point
SSB Third Order Intercept Point
UNITS
mA
dB
dB
dB
dB
dB
dBm
dBm
UPG110B/P
FA/CHIP
MIN TYP
65 135
12 15
6 10
7 10
30 40
10 14
25
Note:
1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC.
MAX
180
±1.5
California Eastern Laboratories


  NEC Electronic Components Datasheet  

UPG110B Datasheet

2-8 GHZ WIDE-BAND AMPLIFIER

No Preview Available !

UPG110B, UPG110P
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDD Drain Voltage
V +10
VIN Input Voltage
V -5 to +0.6
PIN Input Power
dBm
+10
PT Total Power Dissipation
W
1.5
TC Case Temperature
°C -65 to +125
TSTG Storage Temperature
°C -65 to +175
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
EQUIVALENT CIRCUIT
RL1
LL1
RF1
LIN
IN
L1 C1
RG1
RG2
LG1 RS1 CS
VDD
RF2
RL2
R1
R2 CRF
LL2
L2
C2
LL3
L3
C3
OUT
RG3
C4
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INPUT/OUTPUT RETURN LOSS vs.
FREQUENCY
0
RLIN
-10
-20
RLOUT
-30
0 1 2 3 4 5 6 7 8 9 10
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
AND FREQUENCY
20
10
0
-20
f = 2 GHz
f = 5 GHz
f = 8 GHz
-10 0
Input Power, PIN (dBm)
10
ISOLATION vs. FREQUENCY
0
-20
-40
-60
-80
0 1 2 3 4 5 6 7 8 9 10
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
AND GAIN CONTROL
20
10
0 dB
0 -3.1 dB
-5.3 dB
-7.9 dB
-10 -11.7 dB
-10
VG = 0 V IDD = 130 mA
VG = -0.3 V IDD = 110 mA
VG = -0.5 V IDD = 99 mA
VG = -0.7 V IDD = 91 mA
VG = -0.9 V IDD = 83 mA
0 10
Input Power, PIN (dBm)
Note: Gain control can be achieved by applying a negative voltage
(VG) to the input pin.


Part Number UPG110B
Description 2-8 GHZ WIDE-BAND AMPLIFIER
Maker NEC
Total Page 3 Pages
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