Datasheet4U Logo Datasheet4U.com
NEC (now Renesas Electronics) logo

UPG110B Datasheet

Manufacturer: NEC (now Renesas Electronics)
UPG110B datasheet preview

Datasheet Details

Part number UPG110B
Datasheet UPG110B_NEC.pdf
File Size 87.94 KB
Manufacturer NEC (now Renesas Electronics)
Description 2-8 GHZ WIDE-BAND AMPLIFIER
UPG110B page 2 UPG110B page 3

UPG110B Overview

The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave munication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form.

UPG110B Key Features

  • WIDE-BAND: 2 to 8 GHz
  • HIGH GAIN: 15 dB at f = 2 to 8 GHz
  • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
  • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
  • HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB)
NEC (now Renesas Electronics) logo - Manufacturer

More Datasheets from NEC (now Renesas Electronics)

See all NEC (now Renesas Electronics) datasheets

Part Number Description
UPG110P 2 to 8 GHz WIDE-BAND AMPLIFIER
UPG100P WIDE-BAND AMPLIFIER
UPG101P WIDE-BAND AMPLIFIER
UPG103B WIDE-BAND AMPLIFIER
UPG132G L-BAND SPDT SWITCH
UPG133G L-BAND SPDT SWITCH
UPG137GV L-BAND SPDT SWITCH
UPG138GV L-BAND SPDT SWITCH
UPG139GV L-BAND DPDT MMIC SWITCH
UPG152TA L-BAND SPDT SWITCH

UPG110B Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts