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UPG110B - 2-8 GHZ WIDE-BAND AMPLIFIER

Datasheet Summary

Description

The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz.

The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required.

Features

  • WIDE-BAND: 2 to 8 GHz.
  • HIGH GAIN: 15 dB at f = 2 to 8 GHz.
  • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz.
  • INPUT/OUTPUT.

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Datasheet Details

Part number UPG110B
Manufacturer NEC
File Size 87.94 KB
Description 2-8 GHZ WIDE-BAND AMPLIFIER
Datasheet download datasheet UPG110B Datasheet
Additional preview pages of the UPG110B datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB) GAIN vs. FREQUENCY AND TEMPERATURE 20 15 10 5 0 -5 -10 T = -25˚C T = +25˚C T = +75˚C RELIABILITY DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form.
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