UPG110P - 2 to 8 GHz WIDE-BAND AMPLIFIER

NEC (now Renesas Electronics)

General Description

The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz.

And the device is available in chip form.

The µPG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment.

Key Features

Ultra wide band : 2 to 8 GHz.
High Power Gain : GP = 15 dB TYP.
Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz.

📥 Download Datasheet

UPG110P 2 to 8 ghz wide-band amplifier by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	UPG110P
Manufacturer	NEC (now Renesas Electronics)
File Size	50.91 KB
Description	2 to 8 GHz WIDE-BAND AMPLIFIER
Datasheet	UPG110P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment. FEATURES • Ultra wide band : 2 to 8 GHz • High Power Gain : GP = 15 dB TYP. • Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz ORDERING INFORMATION PART NUMBER FORM Chip µPG110P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VIN Pin Ptot*1 Topr*2 Tstg +10 –5 to +0.6 +10 1.