Datasheet Summary
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of the microwave munication system and the measurement equipment.
Features
- Ultra wide band : 2 to 8 GHz
- High Power Gain : GP = 15 dB TYP.
- Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER FORM...