UPG110P Datasheet | NEC

DESCRIPTION The µPG110P is a Ga As monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of the microwave munication system and the measurement equipment. FEATURES - Ultra wide band : 2 to 8 GHz - High Power Gain : GP = 15 d B TYP. - Medium Power @f = 2 to 8 GHz : PO(1 d B) = +14 d Bm TYP. @f = 2 to 8 GHz ORDERING INFORMATION PART NUMBER FORM Chip µPG110P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VIN Pin Ptot- 1 Topr- 2 Tstg +10 - 5 to +0.6 +10 1.5 - 65 to +125 - 65 to +125 V V d Bm W °C °C - 1 Mounted with Au Sn hard solder - 2 The temperature of base material beside the chip REMENDED OPERATING CONDITIONS (TA = 25 °C) Supply Voltage Input Power VDD Pin +8 ± 0.2 - 5 V d Bm Document No. P11882EJ2V0DS00 (2nd edition) (Previous No. ID-2454) Date Published September 1996 P Printed in Japan © µPG110P ELECTRICAL CHARACTERISTICS (TA = 25 °C)- 3 CHARACTERISTIC Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1 d B Gain pression Point SYMBOL IDD GP MIN. 65 12 TYP. 135 15 ± 1.5 6 7 30 10 10 10 40 14 MAX. 180 UNIT m A d B d B d B d B d B d Bm TEST CONDITIONS VDD = +8 V f = 2 to 8 GHz ∆G P RLin RLout ISL PO(1 d B) - 3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1. Fig. 1 4 pin Ceramic Package Top View 4.5 MAX. 0.6 ± 0.06 0.4 ± 0.06 4.1 MIN. 0.1 ± 0.06 1.48 MAX. 0.7 +0.2 - 0.1 4.1 MIN. 4.6...