UPG11N120
UTC
208.08kb
1200v npt planar igbt. The UTC UPG11N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to offers superior condu
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UPG110B - 2-8 GHZ WIDE-BAND AMPLIFIER
(NEC)
..
2-8 GHz WIDE-BAND AMPLIFIER
UPG110B UPG110P
FEATURES
• WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWE.
UPG110P - 2 to 8 GHz WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit desi.
UPG100P - WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circui.
UPG101P - WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circui.
UPG103B - WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG103B
WIDE-BAND AMPLIFIER
µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifier.
UPG10N60E - SMPS N-CHANNEL IGBT
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
UPG10N60E
Preliminary
Insulated Gate Bipolar Transistor
600V, SMPS N-CHANNEL IGBT
DESCRIPTION
The UTC UPG10N60E .
UPG132G - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG132G
L-BAND SPDT SWITCH
DESCRIPTION
µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch whi.
UPG133G - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG133G
L-BAND SPDT SWITCH
DESCRIPTION
UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch whi.
UPG137GV - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
PPG137GV
L-BAND SPDT SWITCH
DESCRIPTION
The PPG137GV is a L-Band SPDT (Single Pole Double Throw) GaAs FET switch.
UPG138GV - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
PPG138GV
L-BAND SPDT SWITCH
DESCRIPTION
The PPG138GV is L-Band SPDT (Single Pole Double Throw) GaAs FET switch w.