UPG137GV Datasheet, Switch, NEC

UPG137GV Features

  • Switch
  • Maximum transmission power : +35 dBm min. (@ VCONT = +5 V/0 V) +34 dBm typ. (@ VCONT = +3 V/0 V)
  • Low insertion loss : 0.55 dB typ. (@ 1 GHz) 0.65 dB typ. (@ 2 GHz)

PDF File Details

Part number:

UPG137GV

Manufacturer:

NEC

File Size:

108.73kb

Download:

📄 Datasheet

Description:

L-band spdt switch. The PPG137GV is a L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital mobile communication system.

Datasheet Preview: UPG137GV 📥 Download PDF (108.73kb)
Page 2 of UPG137GV Page 3 of UPG137GV

UPG137GV Application

  • Applications PDC, IS-136, PHS PHS, PCS, WLAN PHS, PCS, WLAN DIVERSITY, VCO PDC, GSM, IS-136 PDC, GSM, IS-136 PPG130G PPG131G PPG132G PPG133G PPG137

TAGS

UPG137GV
L-BAND
SPDT
SWITCH
NEC

📁 Related Datasheet

UPG132G - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG132G L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch whi.

UPG133G - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch whi.

UPG138GV - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT PPG138GV L-BAND SPDT SWITCH DESCRIPTION The PPG138GV is L-Band SPDT (Single Pole Double Throw) GaAs FET switch w.

UPG139GV - L-BAND DPDT MMIC SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch dev.

UPG100P - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circui.

UPG101P - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circui.

UPG103B - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG103B WIDE-BAND AMPLIFIER µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifier.

UPG10N60E - SMPS N-CHANNEL IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UPG10N60E Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UPG10N60E .

UPG110B - 2-8 GHZ WIDE-BAND AMPLIFIER (NEC)
.. 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWE.

UPG110P - 2 to 8 GHz WIDE-BAND AMPLIFIER (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit desi.

Stock and price

California Eastern Laboratories (CEL)
Bristol Electronics
UPG137GV
2 In Stock
0
Unit Price : $0
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts