UPG168TB Datasheet, SWITCH, California Eastern Laboratories

UPG168TB Features

  • Switch
  • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) =
  • 0.2 to +0.2 V (0 V TYP.) LOW INSERTION LOSS: LINS1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, Vcon

PDF File Details

Part number:

UPG168TB

Manufacturer:

California Eastern Laboratories

File Size:

369.93kb

Download:

📄 Datasheet

Description:

L / s-band spdt switch. NEC's UPG168TB is GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L,

Datasheet Preview: UPG168TB 📥 Download PDF (369.93kb)
Page 2 of UPG168TB Page 3 of UPG168TB

UPG168TB Application

  • Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can

TAGS

UPG168TB
S-BAND
SPDT
SWITCH
California Eastern Laboratories

📁 Related Datasheet

UPG168TB - L / S-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT (Single Pole Double Thr.

UPG100P - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circui.

UPG101P - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circui.

UPG103B - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG103B WIDE-BAND AMPLIFIER µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifier.

UPG10N60E - SMPS N-CHANNEL IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UPG10N60E Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UPG10N60E .

UPG110B - 2-8 GHZ WIDE-BAND AMPLIFIER (NEC)
.. 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWE.

UPG110P - 2 to 8 GHz WIDE-BAND AMPLIFIER (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit desi.

UPG11N120 - 1200V NPT PLANAR IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UPG11N120 Insulated Gate Bipolar Transistor 1200V NPT PLANAR IGBT  DESCRIPTION The UTC UPG11N120 is a 1200V NPT Pl.

UPG132G - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG132G L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch whi.

UPG133G - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch whi.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts