UPG22N60 Datasheet, Igbt, UTC

UPG22N60 Features

  • Igbt
  • VCE(SAT) ≤ 2.5V @ IC=22A, VGE=15V
  • 600V Switching SOA Capability
  • High switching speed
  • High input impedance
  • Low conduction loss

PDF File Details

Part number:

UPG22N60

Manufacturer:

UTC

File Size:

347.05kb

Download:

📄 Datasheet

Description:

Smps n-channel igbt. The UTC UPG22N60 is a N-channel IGBT. it uses UTC’s advanced technology to provide customers with high input impedance, high switchin

Datasheet Preview: UPG22N60 📥 Download PDF (347.05kb)
Page 2 of UPG22N60 Page 3 of UPG22N60

TAGS

UPG22N60
SMPS
N-CHANNEL
IGBT
UTC

📁 Related Datasheet

UPG2214TB - GaAs MMIC (Renesas)
.

UPG2214TB - L & S-BAND SPDT SWITCH (CEL)
NEC's ½W LOW VOLTAGE L, S-BAND SPDT SWITCH UPG2214TB FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 1.8 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.

UPG2214TK - L. S-BAND SPDT SWITCH (CEL)
GaAs INTEGRATED CIRCUIT PG2214TK L, S-BAND SPDT SWITCH DESCRIPTION The PG2214TK is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) swit.

UPG2214TK - L. S-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TK is a GaAs MMIC for L, S-band SPDT (Single Pole Double.

UPG2250T5N - POWER AMPLIFIER (CEL)
GaAs INTEGRATED CIRCUIT µPG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The µPG2250T5N is a GaAs MMIC for power amplifier whi.

uPG2253T6S - RF FRONT-END (California Eastern Labs)
GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit f.

UPG2006TB - NECs 1.8 V L/ S-BAND SPDT SWITCH (NEC)
NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vco.

UPG2009TB - L-BAND HIGH POWER SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaA.

UPG2009TB - L-BAND HIGH POWER SPDT SWITCH (CEL)
NEC's L, S-BAND 4W SPDT SWITCH UPG2009TB FEATURES • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. .

UPG2012TB - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) s.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts