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UPG2009TB - L-BAND HIGH POWER SPDT SWITCH

UPG2009TB Description

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH .
The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application.

UPG2009TB Features

* Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
* High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
* High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V

UPG2009TB Applications

* ORDERING INFORMATION Part Number µPG2009TB-E3 Package 6-pin super minimold Marking G2U Supplying Form
* Embossed tape 8 mm wide
* Pin 1, 2, 3 face the perforation side of the tape
* Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Pa

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Datasheet Details

Part number
UPG2009TB
Manufacturer
NEC
File Size
202.67 KB
Datasheet
UPG2009TB_NEC.pdf
Description
L-BAND HIGH POWER SPDT SWITCH

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L-BAND HIGH POWER SPDT SWITCH NEC
NEC UPG2009TB-like datasheet