Datasheet Details
- Part number
- UPG2009TB
- Manufacturer
- NEC
- File Size
- 202.67 KB
- Datasheet
- UPG2009TB_NEC.pdf
- Description
- L-BAND HIGH POWER SPDT SWITCH
UPG2009TB Description
DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH .
The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application.
UPG2009TB Features
* Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
* High isolation
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
* High power
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V
UPG2009TB Applications
* ORDERING INFORMATION
Part Number µPG2009TB-E3
Package 6-pin super minimold
Marking G2U
Supplying Form
* Embossed tape 8 mm wide
* Pin 1, 2, 3 face the perforation side of the tape
* Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office. Pa
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