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UPG2156TB Datasheet L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET www.DataSheet4U.com GaAs INTEGRATED CIRCUIT µPG2156TB L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT.

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General Description

The µPG2156TB is an L-band single control SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application.

The device can operate from 800 MHz to 2.5 GHz, having the low insertion loss and high linearity.

Key Features

  • Low insertion loss : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1 : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2 : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2.
  • High power switching : Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1/2.
  • 6-pin super minimold package (2.1 × 2.0 × 0.9 mm).

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