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User’s Manual
VR4300TM, VR4305TM, VR4310TM
64-Bit Microprocessor
µ PD30200 µ PD30210
Document No. U10504EJ7V0UMJ1 (7th edition) Date Published August 2000 N CP(K) © 1996, 1998 © MIPS Technologies, Inc. 1994 Printed in Japan
[MEMO]
2 User’s Manual U10504EJ7V0UM00
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
uPD30200 Datasheet
