BF245C Datasheet | NJS

^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodi JLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 BF 245 A (973) 376-8960 BF 245 B BF246C BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. Maximum ratings Drain-source voltage Drain-gate voltage (/s - 0) Gate-source voltage (/o = 0) Drain current Gate current Junction temperature Storage temperature range Total power dissipation (Tamb & 75°C)1) Thermal resistance Junction to ambient air 2,5max - r I- 12.7 mln -H I- 5,2 max Approx. weight 0.25 g f$b DSG - "i r- ~ 4,8 max Dimension- in mm ±VDS +VDQ -VGS 25 m A /a 3 150 m A "C Trtg -65 to +160 °C Ptot 300 m W "th JA I K/W1) Static characteristics (Tj - 25 °C) Gate cutoff current (-VGS " 20 V....