BF245C Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors Features - Interchangeability of drain and source connections - Frequencies up to 700 MHz. APPLICATIONS - LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot yfs Crs total power dissipation forward transfer admittance reverse transfer capacitance Tamb = 75 °C VDS = 15 V; VGS = 0; f = 1 k Hz; Tamb = 25 °C VDS = 20 V; VGS = - 1 V; f = 1 MHz; Tamb = 25 °C ID = 10 n A; VDS = 15 V open drain VDS = 15 V; VGS = 0 CONDITIONS Fig.1 PINNING PIN 1 2 3 BF245A; BF245B; BF245C SYMBOL d s g drain source gate DESCRIPTION handbook, halfpage 2 3 g MAM257 d s Simplified outline (TO-92 variant) and symbol. MIN. - - 0.25 - 2 6 12 - 3 - - - - - - - - - TYP. MAX. ±30 - 8 - 30 6.5 15 25 300...