NXP Semiconductors BF245C
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BF245C |
|---|---|
| Datasheet | BF245C Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel silicon field-effect transistors |
| Buy | Stock & Price |
FEATURES
● Interchangeability of drain and source connections● Frequencies up to 700 MHz.
APPLICATIONS
● LF, HF and DC amplifiers.DESCRIPTION
General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot yfs Crs total power dissipation forward transfer admittance reverse transfer capacitance Tamb = 75 °C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 °C VDS = 20 V; VGS = −1 V; f = 1 MHz; Tamb = 25 °C ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 CONDITIONS Fig.1 PINNING PIN 1 2 3 BF245A; BF245B; BF245C SYMBOL d s g drain source gateDESCRIPTION
handbook, halfpage 2 1 3 g MAM257 d s Simplified outline (TO-92 variant) and symbol. MIN. − −0.25 − 2 6 12 − 3 − − − − − − − − − TYP. MAX. ±30 −8 −30 6.5 15 25 300 6.5 − U...
