| Part Number | BF245C Datasheet |
|---|---|
| Manufacturer | Siliconix |
| Overview |
n-channel JFETs designed for • • •
• VHF/UHF Amplifiers • Oscillators • Mixers
ABSOLUTE MAXIMUM RATINGS (25°C) Drain·Gate Voltage 30 V Drain-Source Voltage .
e Reverse Current
Saturation Drain Current
Selected Into Following Groups INote 21
BF245A BF245B BF245C
VGS
Corresponding to lOSS groups
BF245A BF245B BF245C
VGSloff) Gate *Source Cutoff Voltage 11 gfs 1-0 12 V Crss I- N 11413 A M -1 g,s I-I 15 C CISS ""16 Coss Smail-Signal Common-S. |
BF245C Datasheet and Specifications PDF
The BF245C is a n-channel JFET.
Key Specifications
| Package | TO-92 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 5.33 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BF245C Datasheet |
|---|---|
| Description | N-Channel Amplifiers |
| Manufacturer | Fairchild Semiconductor |
| Overview |
BF245A/BF245B/BF245C
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers. • Sourced from process 50.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Rat.
Common Source Forward gfs Transconductance
VGS = 15V, VGS = 0
2 6 12 3
6.5 15 25 6.5
mA
VGS = 15V, VGS = 0, f = 1KHz
mmhos
©2003 Fairchild Semiconductor Corporation
Rev. A1, June 2003
BF245A/BF245B/BF245C
Package Dimensions
TO-92
4.58 *0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.2. |
| Part Number | BF245C Datasheet |
|---|---|
| Description | N-Channel FET |
| Manufacturer | NJS |
| Overview | ^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 BF 245 A. 1 25'C) Gate-source breakdown voltage Drain-source short-circuit current (Vbs=15V,VGs-0) Gate-source voltage Gate-source pinch-off voltage (V/bs-16V,/D=10nA) -/ess -/QSS £5 £500 '^BfllGSS 230 BF245A: /oss BF245B: /DSS BF245C: /OSS 2.0 to 6.5 6to15 12 to 26 BF245A: -Vfes BF 245 B: -VQS BF245C:. |
| Part Number | BF245C Datasheet |
|---|---|
| Description | N-channel silicon field-effect transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be prote.
* Interchangeability of drain and source connections * Frequencies up to 700 MHz. APPLICATIONS * LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. . |