BF245C Datasheet PDF

^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 BF 245 A (973) 376-8960 AX BF 245 B BF246C BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. Maximum ratings Drain-source voltage Drain-gate voltage (/s * 0) Gate-source voltage (/o = 0) Drain current Gate current Junction temperature Storage temperature range Total power dissipation (Tamb & 75°C)1) Thermal resistance Junction to ambient air 2,5max L —r I— 12.7 mln -H I— 5,2 max Approx. weight 0.25 g f$bDSG —"i r*~ 4,8 max Dimension* in mm ±VDS 30 V +VDQ 30 V -VGS 30 V ID 25 mA /a 10 3 150 mA "C Trtg -65 to +160 °C Ptot 300 mW "thJA 5260 I K/W1) Static characteristics (Tj - 25 °C) Gate cutoff current (-VGS " 20 V. vbs - 0, 7, - 1 25'C) Gate-source breakdown volt...