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BF245B - N-channel silicon field-effect transistors

General Description

General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • Interchangeability of drain and source connections.
  • Frequencies up to 700 MHz.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF245 N-channel silicon field-effect transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS • LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.