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BF246A - N-channel silicon junction field-effect transistors

General Description

General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • Interchangeability of drain and source connections.
  • High IDSS range.
  • Frequency up to 450 MHz.

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📁 Similar Datasheet

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BF246 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens Semiconductor Group
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Other Datasheets by NXP Semiconductors

Part Number Description
BF246B N-channel silicon junction field-effect transistors
BF246C N-channel silicon junction field-effect transistors
BF240 NPN medium frequency transistor
BF245 N-channel silicon field-effect transistors
BF245A N-channel silicon field-effect transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES • Interchangeability of drain and source connections • High IDSS range • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers • Mixers • General purpose switching. DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.