Part BF247B
Description N-channel silicon junction field-effect transistors
Category Transistor
Manufacturer NXP Semiconductors
Size 37.19 KB
NXP Semiconductors

BF247B Overview

Description

BF246A; BF246B; BF246C 1 2 3 d g s drain gate source BF247A; BF247B; BF247C 1 2 3 d s g drain source gate handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage gate-source cut-off voltage drain current BF246A; BF247A BF246B; BF247B BF246C; BF247C Ptot yfs Crs Tj total power dissipation forward transfer admittance reverse transfer capacitance operating junction temperature up to Tamb = 50 °C ID = 10 mA; VDS = 15 V; f = 1 kHz ID = 10 mA; VDS = 15 V; f = 1 MHz ID = 10 nA; VDS = 15 V VDS = 15 V; VGS = 0 30 60 110 - 8 - - - - - - - 3.5 - 80 140 250 400 - - 150 mA mA mA mW mS pF °C CONDITIONS - -0.6 MIN.

Key Features

  • Interchangeability of drain and source connections
  • High IDSS range
  • Frequency up to 450 MHz. APPLICATIONS
  • VHF and UHF amplifiers