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KSD5075 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO

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Datasheet Details

Part number KSD5075
Manufacturer NJS
File Size 61.69 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5075 Datasheet
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Full PDF Text Transcription

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J.E.tiE.u <3z.mi-t.onau.ctoi L/^ioaucta, Una. -/ tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ Tc=25t Tj Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150 -c -55-150 r TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5075 f 1 ,, -HJ PIN 1.BASE 2.
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