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KSD5075 - Silicon NPN Power Transistor

KSD5075 Description

J.E.tiE.u <3z.mi-t.onau.ctoi L/^ioaucta, Una.-/ tJ 20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability APPLICATIONS. Designed for c.

KSD5075 Applications

* Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collect

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Silicon NPN Power Transistor NJS
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