KSD5075T
KSD5075T is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Electronic ballast applicaition
- High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
IC Collector Current- Continuous
6V 3.5 A
ICP Collector Current-Peak Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
10 A 75 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
ICBO Collector Cutoff...
