High Breakdown Voltage-
:VCBo=1500V(Min)
High Switching Speed
High Reliability
APPLICATIONS
Electronic ballast applicaition
High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base V
Full PDF Text Transcription for KSD5075T (Reference)
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KSD5075T. For precise diagrams, and layout, please refer to the original PDF.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5075T DESCRIPTION • ...
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73) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5075T DESCRIPTION • High Breakdown Voltage- :VCBo=1500V(Min) • High Switching Speed • High Reliability APPLICATIONS • Electronic ballast applicaition • High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 • V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC-25'C 10 A 75 W Tj Junction Temperature 150 'C Tstg Storage Temperature Range -55-150 6C * ^, 2 fW •* 1 j '_ !23 .3 PIN 1.BAS
KSD5075T Datasheet
