NJS KSD5075T
Silicon NPN Power Transistor
| Part No. | KSD5075T |
|---|---|
| Datasheet | KSD5075T Download |
| Manufacturer |  NJS |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● High Breakdown Voltage- :VCBo=1500V(Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Electronic ballast applicaition● High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800● V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC-25'C 10 A 75 W Tj Junction Temperature 150 'C Tstg Storage Temperature Range -55-150 6C * ^, 2 fW
●* 1 j '_ !23 .3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package -●● B H wi ** V *( L-F ! ¥ f ±&$i A ~\ -» *S — T506- 1 r ! * T H '-, j T, Si ^ K F J rrD » H <» h 5dti-'
● ii '●SOO —» RK cI 4 mm DIM MtN MAX A 15.70 15.90 B 9.90 10.10 r 4.20 4.40 D 0.70 0.90 F 3.40 3.60 G 4.98 5.18 H 2.70 2.90 J 0.44 0.46 K 13.20 13.40 L 1.10 1.30 Q 2.70 2.90 R 2.50 2.70 S 1.29 1.31 U 6.45 6.65 V 8.66 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
