NJS KSD5072
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
● Built-in Damper Diode B . ,. 2
●jo—« k ¥ TI^LJ PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PML package
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V' VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 16 A 60 W 150 .●c Tstg Storage Temperature Range -55-150 'C / : : :● :
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●●●-R*-●^«* J -»*^o *-N-» mm DIM MIN MAX A 18.90 20.10 B 15.90 16.10 C 5.50 5,70 D 0.90 1,10 F 3.30 3,50 G 2.90 3,10 K 5,90 6.10 J 0,595 0.605 K 22,30 22.50 L 1.SO 2,10 N 10,80 11.00 u 4.90 5.10 R 3.75 3.95 S 3.2...