KSD5072 Overview
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
| Part number | KSD5072 |
|---|---|
| Datasheet | KSD5072 Datasheet PDF (Download) |
| File Size | 131.63 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
|
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
KSD5072 | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR | Fairchild |
![]() |
KSD5072 | Silicon NPN Power Transistor | NJS |