KSD5076 Overview
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
| Part number | KSD5076 |
|---|---|
| Datasheet | KSD5076-InchangeSemiconductor.pdf |
| File Size | 129.95 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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KSD5076 | Silicon NPN Power Transistor | NJS |
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