KSD5079 Description
·High Breakdown Voltage- : IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 800V.
KSD5079 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
NJS |
KSD5079 | Silicon NPN Power Transistor |
·High Breakdown Voltage- : IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 800V.