KSD5079 Overview
·High Breakdown Voltage- : IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 800V.
| Part number | KSD5079 |
|---|---|
| Datasheet | KSD5079-InchangeSemiconductor.pdf |
| File Size | 129.91 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 800V.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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KSD5079 | Silicon NPN Power Transistor | NJS |
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