High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO
Full PDF Text Transcription for KSD5079 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KSD5079. For precise diagrams, and layout, please refer to the original PDF.
J.£ii£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5079 DESCRI...
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7-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5079 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25-C Tj Junction Temperature 30 A 70 W 150 •c Tstg Storage Temperature Range -55-150 'C f __ o r PIN 1.BASE 2. COLLECTOR 3.
KSD5079 Datasheet
