NJS KSD5079
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25-C Tj Junction Temperature 30 A 70 W 150●c Tstg Storage Temperature Range -55-150 'C f __ o r PIN 1.BASE 2. COLLECTOR 3. WITTER TO-3PML package r: :;●●:●● -* c - 4
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●\K- ' ' -«- - R -"- »_ N " D mm DIM M!N A 19.9€ B 15.90 C: 5.50 D 0.90 F 3,30 G 2.90 H 5.90 J 0,595 K 22,30 L 1.90 N 10.80 Q 4.90 R 3.75 S 3.20 U 9,90 Y 4.70 2 1 1.90 MAX 20.10 16.10 5,70 1.10 3,50 3,10 6.10 0,605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4,90 2,10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.