NJS KSD5075
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25-C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ Tc=25t Tj Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150 -c -55-150 r TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5075 f 1 ,, -HJ PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PML package B_. x» - J» B t s> ' " ! f|●-
● ;u A .● I »-,.-.:„ «. z k' — »- Y
●*-. :
●1 G f f- -» mm DIM MIN MAX A 19,90 20,10 B 15,90 16,10 C 5.50 5.70 D 0.90 1.10 F 3.30 3.50 G 2.90 3,10 H 5,90 6.10 J 0.595 0,605 K 22.30 22.50 L 1.90 2.10 N 10,80 11,00 Q 4,90 5,10 R 3.75 3.95 S 3.20 3.40 U 9.90 10.10 Y 4.70 4.90 Z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.