High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Full PDF Text Transcription for KSD5075 (Reference)
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KSD5075. For precise diagrams, and layout, please refer to the original PDF.
J.E.tiE.u <3z.mi-t.onau.ctoi L/^ioaucta, Una. -/ tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- ...
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A. Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ Tc=25t Tj Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150 -c -55-150 r TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5075 f 1 ,, -HJ
KSD5075 Datasheet
