KSD5075 Datasheet and Specifications PDF

The KSD5075 is a Silicon NPN Power Transistor.

Part NumberKSD5075 Datasheet
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR. Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain
*Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 3A , IB1= 0.8A ; IB2= -1.6A RL= 66.7Ω; VCC= 200V MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA 1 mA 8 3 MHz 0.4 μs isc .
Part NumberKSD5075 Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerNJS
Overview • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL . 50 G 2.90 3,10 H 5,90 6.10 J 0.595 0,605 K 22.30 22.50 L 1.90 2.10 N 10,80 11,00 Q 4,90 5,10 R 3.75 3.95 S 3.20 3.40 U 9.90 10.10 Y 4.70 4.90 Z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by.

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