High Breakdown Voltage-
:VCBO= 1500V (Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO
Full PDF Text Transcription for KSD5076 (Reference)
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KSD5076. For precise diagrams, and layout, please refer to the original PDF.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. ue£i, Una, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • High ...
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5 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- :VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 16 A 60 W 150 •c Tstg Storage Temperature Range -55-150 'C f KSD5076 j PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PML pack
KSD5076 Datasheet
