NJS KSD5076
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- :VCBO= 1500V (Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 16 A 60 W 150●c Tstg Storage Temperature Range -55-150 'C f KSD5076 j PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PML package ^ 1 ti A . '' 'll i H' t z K t *
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● * :'y G -*" *~L mm DIM MiN , MAX A 19.90 20.10 B 15,90 16.10 c 5,50 5.70 D 0.90 1,10 F 3.30 3,50 G 2.90 3,10 H 5.90 6.10 J 0,595 0,605 K 22.30 22.50 L 1.90 2.10 N 10.80 11.00 0 4.90 5.10 R 3.75 3.95 S 3.20 3,40 U 9.90 10.10 V 4.70 4,90 z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press.