KSD5075T
KSD5075T is Silicon NPN Power Transistor manufactured by NJS.
DESCRIPTION
- High Breakdown Voltage-
:VCBo=1500V(Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Electronic ballast applicaition
- High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
- V
VEBO
Emitter-Base Voltage
Ic
Collector Current- Continuous
Collector Current-Peak
Collector Power Dissipation
@ TC-25'C
Tj
Junction Temperature
'C
Tstg
Storage Temperature Range
-55-150 6C
- ^,
2 f...
