KSD5075T Silicon NPN Power Transistor

NJS

Description

20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A., One.Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 .
High Breakdown Voltage- :VCBo=1500V(Min). High Switching Speed. High Reliability APPLICATIONS. Electronic ballas.

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Datasheet Specifications

Part number: KSD5075T
Manufacturer: NJS
File Size: 62.00 KB
Datasheet: KSD5075T-NewJerseySemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Electronic ballast applicaition
* High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800
* V VEBO Emitter-Base Voltage 6 V Ic Collector Current-

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KSD5075T Silicon NPN Power Transistor NJS

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