KSD5076 Silicon NPN Power Transistor

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Description

20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.ue£i, Una, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transis.
High Breakdown Voltage- :VCBO= 1500V (Min). High Switching Speed. High Reliability APPLICATIONS. Designed for co.

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Datasheet Specifications

Part number: KSD5076
Manufacturer: NJS
File Size: 61.02 KB
Datasheet: KSD5076-NewJerseySemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector C

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KSD5076 Silicon NPN Power Transistor NJS

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